Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

P. A. Mortemousque; T. Sekiguchi; C. Culan; M. P. Vlasenko; R. G. Elliman; L. S. Vlasenko; K. M. Itoh

doi:10.1063/1.4747723

Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

P. A. Mortemousque^*, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G. Elliman, L. S. Vlasenko, K. M. Itoh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

Original language	English
Article number	082409
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747723
Publication status	Published - 20 Aug 2012

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title = "Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields",

abstract = "Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.",

author = "Mortemousque, {P. A.} and T. Sekiguchi and C. Culan and Vlasenko, {M. P.} and Elliman, {R. G.} and Vlasenko, {L. S.} and Itoh, {K. M.}",

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T1 - Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

AU - Mortemousque, P. A.

AU - Sekiguchi, T.

AU - Culan, C.

AU - Vlasenko, M. P.

AU - Elliman, R. G.

AU - Vlasenko, L. S.

AU - Itoh, K. M.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

AB - Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84865491854&partnerID=8YFLogxK

U2 - 10.1063/1.4747723

DO - 10.1063/1.4747723

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082409

ER -

Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

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