Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation

R. Leon, C. Lobo, J. Zou, T. Romeo, D. J.H. Cockayne

    Research output: Contribution to journalArticlepeer-review

    57 Citations (Scopus)

    Abstract

    Contrasting behaviors are observed in InGaAs/GaAs island formation during vapor phase epitaxy: variation of group V partial pressures gives different critical thicknesses for the onset of the Stranski-Krastanow transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. The latter experiments show that small lens-shaped islands can be found in equilibrium if InGaAs surface energies are minimized, leading to the conclusion that AsH3 can raise surface energies and act as an impurity-free “morphactant.”.

    Original languageEnglish
    Pages (from-to)2486-2489
    Number of pages4
    JournalPhysical Review Letters
    Volume81
    Issue number12
    DOIs
    Publication statusPublished - 21 Sept 1998

    Fingerprint

    Dive into the research topics of 'Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation'. Together they form a unique fingerprint.

    Cite this