Abstract
Contrasting behaviors are observed in InGaAs/GaAs island formation during vapor phase epitaxy: variation of group V partial pressures gives different critical thicknesses for the onset of the Stranski-Krastanow transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. The latter experiments show that small lens-shaped islands can be found in equilibrium if InGaAs surface energies are minimized, leading to the conclusion that AsH3 can raise surface energies and act as an impurity-free “morphactant.”.
Original language | English |
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Pages (from-to) | 2486-2489 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 81 |
Issue number | 12 |
DOIs | |
Publication status | Published - 21 Sept 1998 |