STATIC DISTRIBUTION OF HOT ELECTRONS AND ENERGY SELECTIVE EXTRACTION OBSERVED BY OPTICALLY ASSISTED IV MEASUREMENTS (poster)

Room temperature IV measurements were carried out on MESA samples containing a single Si-QD array as an energy selective contact below a nc-Si absorbing layer. The dark IV measurements revealed a weak resonant tunneling feature. The same measurements were carried out with a massive photon flux in the energy range suitable for generating hot carriers without inducing opto-thermal emission over the energy selective contact. This resulted in an enhancement of the resonant tunneling feature by one order of magnitude, with the main value of the bias voltage and the bias range of the resonant tunneling feature being reduced by 42 % as compared to the dark IV measurements. With these experimental results, a static distribution of hot carriers being extracted by an energy selective contact at room temperature is evident.
Keywords: Hot Carriers { 1: Characterisation { 2: Contact { 3