Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

J. M. Glasko*, R. G. Elliman, J. Zou, D. J.H. Cockayne, J. D. Fitz Gerald

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

High-energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. This study examines the defects responsible for relaxation and for the evolution of the strain during subsequent annealing. Three distinct annealing stages are identified and correlated with the defect microstructure. In the temperature range from 350 to 600°C, a gradual recovery of strain is observed. This is shown to correlate with annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600°C, consistent with an excess vacancy concentration in the irradiated alloy layer. In the temperature range 600-750°C, the strain recovers to a maximum value which is correlated with the ripening of voids, dissolution of alloy layer 113 rodlike defects, and 113 planar interstitial defects in the substrate. At temperatures in the range 750-1000°C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These intrinsic, looplike dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, toward the surface.

Original languageEnglish
Pages (from-to)838-840
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number6
DOIs
Publication statusPublished - 1998

Fingerprint

Dive into the research topics of 'Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature'. Together they form a unique fingerprint.

Cite this