Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

W. Lei; H. H. Tan; C. Jagadish; Q. J. Ren; J. Lu; Z. H. Chen

doi:10.1063/1.3522889

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

W. Lei^*
, H. H. Tan
, C. Jagadish
, Q. J. Ren
, J. Lu
, Z. H. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.

Original language	English
Article number	223108
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3522889
Publication status	Published - 29 Nov 2010

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@article{9a8afdf1878740eb884b4e7847e7fe72,

title = "Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition",

abstract = "This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.",

author = "W. Lei and Tan, \{H. H.\} and C. Jagadish and Ren, \{Q. J.\} and J. Lu and Chen, \{Z. H.\}",

year = "2010",

month = nov,

day = "29",

doi = "10.1063/1.3522889",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes

T2 - Effect of deposition thickness and composition

AU - Lei, W.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Ren, Q. J.

AU - Lu, J.

AU - Chen, Z. H.

PY - 2010/11/29

Y1 - 2010/11/29

N2 - This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.

AB - This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.

UR - https://www.scopus.com/pages/publications/78650658515

U2 - 10.1063/1.3522889

DO - 10.1063/1.3522889

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223108

ER -

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

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