Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation

T. H. Kim*, K. Belay, D. Llewellyn, R. Elliman, D. Choi, B. Luther-Davies

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.

    Original languageEnglish
    Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
    Pages167-168
    Number of pages2
    DOIs
    Publication statusPublished - 2012
    Event2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia
    Duration: 12 Dec 201214 Dec 2012

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

    Conference

    Conference2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
    Country/TerritoryAustralia
    CityMelbourne, VIC
    Period12/12/1214/12/12

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