@inproceedings{22937c3bc3d7490bba22f21727d258b3,
title = "Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation",
abstract = "Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.",
author = "Kim, {T. H.} and K. Belay and D. Llewellyn and R. Elliman and D. Choi and B. Luther-Davies",
year = "2012",
doi = "10.1109/COMMAD.2012.6472413",
language = "English",
isbn = "9781467330459",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "167--168",
booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",
note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",
}