Strain relaxation during epitaxial crystallization of GexSi1-x alloy layers produced by ion-implantation

R. G. Elliman; W. C. Wong

Strain relaxation during epitaxial crystallization of Ge_xSi_1-x alloy layers produced by ion-implantation

R. G. Elliman^*
, W. C. Wong

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Time-resolved reflectivity (TRR), Rutherford backscattering and channelling spectrometry (RBS-C) and transmission electron microscopy (TEM) were employed to study the in-situ crystallization behaviour and post-anneal defect structures in Ge implanted Si samples annealed at 600 °C. Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallization velocity caused by roughening of the crystalline/amorphous interface.

Original language	English
Pages (from-to)	507-512
Number of pages	6
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 1
Publication status	Published - 1994
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993

Cite this

@article{4576280e10eb46c39b0b41f50a6f5a7c,

title = "Strain relaxation during epitaxial crystallization of GexSi1-x alloy layers produced by ion-implantation",

abstract = "Time-resolved reflectivity (TRR), Rutherford backscattering and channelling spectrometry (RBS-C) and transmission electron microscopy (TEM) were employed to study the in-situ crystallization behaviour and post-anneal defect structures in Ge implanted Si samples annealed at 600 °C. Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallization velocity caused by roughening of the crystalline/amorphous interface.",

author = "Elliman, \{R. G.\} and Wong, \{W. C.\}",

year = "1994",

language = "English",

volume = "143-4",

pages = "507--512",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd.",

number = "pt 1",

note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

}

TY - JOUR

T1 - Strain relaxation during epitaxial crystallization of GexSi1-x alloy layers produced by ion-implantation

AU - Elliman, R. G.

AU - Wong, W. C.

PY - 1994

Y1 - 1994

N2 - Time-resolved reflectivity (TRR), Rutherford backscattering and channelling spectrometry (RBS-C) and transmission electron microscopy (TEM) were employed to study the in-situ crystallization behaviour and post-anneal defect structures in Ge implanted Si samples annealed at 600 °C. Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallization velocity caused by roughening of the crystalline/amorphous interface.

AB - Time-resolved reflectivity (TRR), Rutherford backscattering and channelling spectrometry (RBS-C) and transmission electron microscopy (TEM) were employed to study the in-situ crystallization behaviour and post-anneal defect structures in Ge implanted Si samples annealed at 600 °C. Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallization velocity caused by roughening of the crystalline/amorphous interface.

UR - https://www.scopus.com/pages/publications/0028553967

M3 - Conference article

AN - SCOPUS:0028553967

SN - 0255-5476

VL - 143-4

SP - 507

EP - 512

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 1

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Strain relaxation during epitaxial crystallization of Ge_xSi_1-x alloy layers produced by ion-implantation

Abstract

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