Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation

D. Choi; B. Luther-Davies; T. Kim; K. Belay; D. Llewellyn; R. G. Elliman

doi:10.1109/COMMAD.2010.5699714

Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation

D. Choi^*, B. Luther-Davies, T. Kim, K. Belay, D. Llewellyn, R. G. Elliman

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and strained silicon on the GeOI.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	155-156
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699714
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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Choi, D., Luther-Davies, B., Kim, T., Belay, K., Llewellyn, D., & Elliman, R. G. (2010). Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 155-156). Article 5699714 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699714

@inproceedings{7dc45f1760084d428800486dba3ec58c,

title = "Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation",

abstract = "Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and strained silicon on the GeOI.",

author = "D. Choi and B. Luther-Davies and T. Kim and K. Belay and D. Llewellyn and Elliman, {R. G.}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699714",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "155--156",

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note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Choi, D, Luther-Davies, B, Kim, T, Belay, K, Llewellyn, D & Elliman, RG 2010, Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699714, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 155-156, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699714

Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation. / Choi, D.; Luther-Davies, B.; Kim, T. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 155-156 5699714 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation

AU - Choi, D.

AU - Luther-Davies, B.

AU - Kim, T.

AU - Belay, K.

AU - Llewellyn, D.

AU - Elliman, R. G.

PY - 2010

Y1 - 2010

N2 - Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and strained silicon on the GeOI.

AB - Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and strained silicon on the GeOI.

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U2 - 10.1109/COMMAD.2010.5699714

DO - 10.1109/COMMAD.2010.5699714

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 155

EP - 156

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Choi D, Luther-Davies B, Kim T, Belay K, Llewellyn D, Elliman RG. Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 155-156. 5699714. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699714

Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation

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