Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Bin Chen; Jun Wang; Qiang Gao; Yujie Chen; Xiaozhou Liao; Chunsheng Lu; Hark Hoe Tan; Yiu Wing Mai; Jin Zou; Simon P. Ringer; Huajian Gao; Chennupati Jagadish

doi:10.1021/nl402180k

Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Bin Chen, Jun Wang, Qiang Gao, Yujie Chen, Xiaozhou Liao^*, Chunsheng Lu, Hark Hoe Tan, Yiu Wing Mai, Jin Zou, Simon P. Ringer, Huajian Gao, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

Original language	English
Pages (from-to)	4369-4373
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl402180k
Publication status	Published - 11 Sept 2013

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title = "Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing",

abstract = "Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.",

keywords = "GaAs nanowires, in situ deformation, molecular dynamics, stacking fault, strengthening, transmission electron microscopy",

author = "Bin Chen and Jun Wang and Qiang Gao and Yujie Chen and Xiaozhou Liao and Chunsheng Lu and Tan, {Hark Hoe} and Mai, {Yiu Wing} and Jin Zou and Ringer, {Simon P.} and Huajian Gao and Chennupati Jagadish",

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doi = "10.1021/nl402180k",

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TY - JOUR

T1 - Strengthening brittle semiconductor nanowires through stacking faults

T2 - Insights from in situ mechanical testing

AU - Chen, Bin

AU - Wang, Jun

AU - Gao, Qiang

AU - Chen, Yujie

AU - Liao, Xiaozhou

AU - Lu, Chunsheng

AU - Tan, Hark Hoe

AU - Mai, Yiu Wing

AU - Zou, Jin

AU - Ringer, Simon P.

AU - Gao, Huajian

AU - Jagadish, Chennupati

PY - 2013/9/11

Y1 - 2013/9/11

N2 - Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

AB - Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

KW - GaAs nanowires

KW - in situ deformation

KW - molecular dynamics

KW - stacking fault

KW - strengthening

KW - transmission electron microscopy

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U2 - 10.1021/nl402180k

DO - 10.1021/nl402180k

M3 - Article

SN - 1530-6984

VL - 13

SP - 4369

EP - 4373

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

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