@inproceedings{a008137ad3f9439f8fe19d490c63bb92,
title = "Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon",
abstract = "Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.",
keywords = "Pulsed laser melting, impurity band, optical absorption, silicon, solidification, sulfur, supersaturation",
author = "I. Umezu and A. Kohno and Warrender, {J. M.} and Y. Takatori and Y. Hirao and S. Nakagawa and A. Sugimura and S. Charnvanichborikarn and Williams, {J. S.} and Aziz, {M. J.}",
year = "2011",
doi = "10.1063/1.3666252",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "51--52",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}