Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

I. Umezu*, A. Kohno, J. M. Warrender, Y. Takatori, Y. Hirao, S. Nakagawa, A. Sugimura, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Citations (Scopus)

    Abstract

    Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.

    Original languageEnglish
    Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
    Pages51-52
    Number of pages2
    DOIs
    Publication statusPublished - 2011
    Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
    Duration: 25 Jul 201030 Jul 2010

    Publication series

    NameAIP Conference Proceedings
    Volume1399
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Conference

    Conference30th International Conference on the Physics of Semiconductors, ICPS-30
    Country/TerritoryKorea, Republic of
    CitySeoul
    Period25/07/1030/07/10

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