Strong photosensitivity in tin-doped silica films

K. Gaff; A. Durandet; T. Weijers; J. Love; R. Boswell

doi:10.1049/el:20000574

Strong photosensitivity in tin-doped silica films

K. Gaff^*, A. Durandet, T. Weijers, J. Love, R. Boswell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO₂ were exposed to 2kJ/cm² of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10^-3 were observed on irradiation.

Original language	English
Pages (from-to)	842-843
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	9
DOIs	https://doi.org/10.1049/el:20000574
Publication status	Published - 27 Apr 2000

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@article{cfd0ae824583498885139c1aad2689a9,

title = "Strong photosensitivity in tin-doped silica films",

abstract = "The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol\% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.",

author = "K. Gaff and A. Durandet and T. Weijers and J. Love and R. Boswell",

year = "2000",

month = apr,

day = "27",

doi = "10.1049/el:20000574",

language = "English",

volume = "36",

pages = "842--843",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "9",

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TY - JOUR

T1 - Strong photosensitivity in tin-doped silica films

AU - Gaff, K.

AU - Durandet, A.

AU - Weijers, T.

AU - Love, J.

AU - Boswell, R.

PY - 2000/4/27

Y1 - 2000/4/27

N2 - The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.

AB - The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7 × 10-3 were observed on irradiation.

UR - https://www.scopus.com/pages/publications/0033742988

U2 - 10.1049/el:20000574

DO - 10.1049/el:20000574

M3 - Article

SN - 0013-5194

VL - 36

SP - 842

EP - 843

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Strong photosensitivity in tin-doped silica films

Abstract

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