Structural and electrical properties of In-implanted Ge

R. Feng; F. Kremer; D. J. Sprouster; S. Mirzaei; S. Decoster; C. J. Glover; S. A. Medling; S. P. Russo; M. C. Ridgway

doi:10.1063/1.4934200

Structural and electrical properties of In-implanted Ge

R. Feng, F. Kremer, D. J. Sprouster, S. Mirzaei, S. Decoster, C. J. Glover, S. A. Medling, S. P. Russo, M. C. Ridgway

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7 Citations (Scopus)

Abstract

We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

Original language	English
Article number	165701
Journal	Journal of Applied Physics
Volume	118
Issue number	16
DOIs	https://doi.org/10.1063/1.4934200
Publication status	Published - 28 Oct 2015

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title = "Structural and electrical properties of In-implanted Ge",

abstract = "We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.",

author = "R. Feng and F. Kremer and Sprouster, {D. J.} and S. Mirzaei and S. Decoster and Glover, {C. J.} and Medling, {S. A.} and Russo, {S. P.} and Ridgway, {M. C.}",

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T1 - Structural and electrical properties of In-implanted Ge

AU - Feng, R.

AU - Kremer, F.

AU - Sprouster, D. J.

AU - Mirzaei, S.

AU - Decoster, S.

AU - Glover, C. J.

AU - Medling, S. A.

AU - Russo, S. P.

AU - Ridgway, M. C.

PY - 2015/10/28

Y1 - 2015/10/28

N2 - We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

AB - We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

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U2 - 10.1063/1.4934200

DO - 10.1063/1.4934200

M3 - Article

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

M1 - 165701

ER -

Structural and electrical properties of In-implanted Ge

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