Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

Jung Hyun Kang; Qiang Gao; Hannah J. Joyce; Yong Kim; Yanan Guo; Hongyi Xu; Jin Zou; Melodie A. Fickenscher; Leigh M. Smith; Howard E. Jackson; J. M. Yarrison-Rice; Hark Hoe Tan; Chennupati Jagadish

doi:10.1109/COMMAD.2010.5699778

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

Jung Hyun Kang^*
, Qiang Gao
, Hannah J. Joyce
, Yong Kim
, Yanan Guo
, Hongyi Xu
, Jin Zou
, Melodie A. Fickenscher
, Leigh M. Smith
, Howard E. Jackson
, J. M. Yarrison-Rice
, Hark Hoe Tan
, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Publisher	IEEE
Pages	57-58
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699778
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699778

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Kang, J. H., Gao, Q., Joyce, H. J., Kim, Y., Guo, Y., Xu, H., Zou, J., Fickenscher, M. A., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Tan, H. H., & Jagadish, C. (2010). Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 57-58). IEEE. https://doi.org/10.1109/COMMAD.2010.5699778

@inproceedings{956db6c4c5dd43e2af6621e012f5d85e,

title = "Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates",

abstract = "GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.",

author = "Kang, \{Jung Hyun\} and Qiang Gao and Joyce, \{Hannah J.\} and Yong Kim and Yanan Guo and Hongyi Xu and Jin Zou and Fickenscher, \{Melodie A.\} and Smith, \{Leigh M.\} and Jackson, \{Howard E.\} and Yarrison-Rice, \{J. M.\} and Tan, \{Hark Hoe\} and Chennupati Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699778",

language = "English",

isbn = "9781424473328",

pages = "57--58",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

publisher = "IEEE",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Kang, JH, Gao, Q, Joyce, HJ, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, MA, Smith, LM, Jackson, HE, Yarrison-Rice, JM, Tan, HH & Jagadish, C 2010, Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. IEEE, pp. 57-58, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699778

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. / Kang, Jung Hyun; Gao, Qiang; Joyce, Hannah J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. IEEE, 2010. p. 57-58.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

AU - Kang, Jung Hyun

AU - Gao, Qiang

AU - Joyce, Hannah J.

AU - Kim, Yong

AU - Guo, Yanan

AU - Xu, Hongyi

AU - Zou, Jin

AU - Fickenscher, Melodie A.

AU - Smith, Leigh M.

AU - Jackson, Howard E.

AU - Yarrison-Rice, J. M.

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2010

Y1 - 2010

N2 - GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.

AB - GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.

UR - https://www.scopus.com/pages/publications/79951728813

U2 - 10.1109/COMMAD.2010.5699778

DO - 10.1109/COMMAD.2010.5699778

M3 - Conference Paper

SN - 9781424473328

SP - 57

EP - 58

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

PB - IEEE

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

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