TY - GEN
T1 - Structural and optical properties of H implanted ZnO
AU - Chan, K. S.
AU - Ye, J. D.
AU - Parkinson, P.
AU - Monakhov, E.
AU - Johansen, K. M.
AU - Vines, L.
AU - Svensson, B. G.
AU - Jagadish, C.
AU - Wong-Leung, J.
PY - 2012
Y1 - 2012
N2 - ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.
AB - ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.
UR - http://www.scopus.com/inward/record.url?scp=84875597962&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2012.6472439
DO - 10.1109/COMMAD.2012.6472439
M3 - Conference contribution
SN - 9781467330459
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 219
EP - 220
BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Y2 - 12 December 2012 through 14 December 2012
ER -