Structural and optical properties of H implanted ZnO

K. S. Chan; J. D. Ye; P. Parkinson; E. Monakhov; K. M. Johansen; L. Vines; B. G. Svensson; C. Jagadish; J. Wong-Leung

doi:10.1109/COMMAD.2012.6472439

Structural and optical properties of H implanted ZnO

K. S. Chan^*, J. D. Ye, P. Parkinson, E. Monakhov, K. M. Johansen, L. Vines, B. G. Svensson, C. Jagadish, J. Wong-Leung

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	219-220
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472439
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472439

Cite this

Chan, K. S., Ye, J. D., Parkinson, P., Monakhov, E., Johansen, K. M., Vines, L., Svensson, B. G., Jagadish, C., & Wong-Leung, J. (2012). Structural and optical properties of H implanted ZnO. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 219-220). Article 6472439 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472439

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title = "Structural and optical properties of H implanted ZnO",

abstract = "ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.",

author = "Chan, \{K. S.\} and Ye, \{J. D.\} and P. Parkinson and E. Monakhov and Johansen, \{K. M.\} and L. Vines and Svensson, \{B. G.\} and C. Jagadish and J. Wong-Leung",

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pages = "219--220",

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note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

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Chan, KS, Ye, JD, Parkinson, P, Monakhov, E, Johansen, KM, Vines, L, Svensson, BG, Jagadish, C & Wong-Leung, J 2012, Structural and optical properties of H implanted ZnO. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472439, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 219-220, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472439

Structural and optical properties of H implanted ZnO. / Chan, K. S.; Ye, J. D.; Parkinson, P. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 219-220 6472439 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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AU - Chan, K. S.

AU - Ye, J. D.

AU - Parkinson, P.

AU - Monakhov, E.

AU - Johansen, K. M.

AU - Vines, L.

AU - Svensson, B. G.

AU - Jagadish, C.

AU - Wong-Leung, J.

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AB - ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.

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Chan KS, Ye JD, Parkinson P, Monakhov E, Johansen KM, Vines L et al. Structural and optical properties of H implanted ZnO. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 219-220. 6472439. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472439

Structural and optical properties of H implanted ZnO

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