TY - JOUR
T1 - Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon
AU - Zhu, Xianfang
AU - Williams, J. S.
AU - McCallum, J. C.
PY - 1999
Y1 - 1999
N2 - Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford backscattering and channeling (RBS-C) and cross-sectional transmission electron microscopy (XTEM). The recrystallisation kinetics of the heavily bombarded amorphous Si layers were measured using time re-solved reflectivity. Results indicate that amorphous Si is extremely resistant to continued bombardment and recrystallises epitaxially to near-perfect crystalline Si independent of the implantation temperature. However, the regrowth rate does exhibit a slow down within the high dose implanted region and the temperature dependence of this effect points to some minor defect-mediated structural rearrangements. In contrast, irradiation of crystalline Si at elevated temperature leads to a complex network of defects, their precise nature depending on the dose and implantation temperature.
AB - Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford backscattering and channeling (RBS-C) and cross-sectional transmission electron microscopy (XTEM). The recrystallisation kinetics of the heavily bombarded amorphous Si layers were measured using time re-solved reflectivity. Results indicate that amorphous Si is extremely resistant to continued bombardment and recrystallises epitaxially to near-perfect crystalline Si independent of the implantation temperature. However, the regrowth rate does exhibit a slow down within the high dose implanted region and the temperature dependence of this effect points to some minor defect-mediated structural rearrangements. In contrast, irradiation of crystalline Si at elevated temperature leads to a complex network of defects, their precise nature depending on the dose and implantation temperature.
KW - Amorphous and crystalline silicon
KW - Complex crystal defect
KW - High dose self-implantation
KW - Regrowth
UR - http://www.scopus.com/inward/record.url?scp=0033513654&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(98)00793-9
DO - 10.1016/S0168-583X(98)00793-9
M3 - Article
SN - 0168-583X
VL - 148
SP - 268
EP - 272
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
ER -