Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon

Xianfang Zhu, J. S. Williams*, J. C. McCallum

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford backscattering and channeling (RBS-C) and cross-sectional transmission electron microscopy (XTEM). The recrystallisation kinetics of the heavily bombarded amorphous Si layers were measured using time re-solved reflectivity. Results indicate that amorphous Si is extremely resistant to continued bombardment and recrystallises epitaxially to near-perfect crystalline Si independent of the implantation temperature. However, the regrowth rate does exhibit a slow down within the high dose implanted region and the temperature dependence of this effect points to some minor defect-mediated structural rearrangements. In contrast, irradiation of crystalline Si at elevated temperature leads to a complex network of defects, their precise nature depending on the dose and implantation temperature.

    Original languageEnglish
    Pages (from-to)268-272
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume148
    Issue number1-4
    DOIs
    Publication statusPublished - 1999

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