Abstract
Highly lattice mismatched (7.8%) GaAsGaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSbGaAs was fully relaxed suggest that the growth of GaSb nanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSb nanowires leads to the equilibrium growth.
Original language | English |
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Article number | 231917 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2006 |