Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Y. N. Guo, J. Zou*, M. Paladugu, H. Wang, Q. Gao, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    101 Citations (Scopus)

    Abstract

    Highly lattice mismatched (7.8%) GaAsGaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSbGaAs was fully relaxed suggest that the growth of GaSb nanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSb nanowires leads to the equilibrium growth.

    Original languageEnglish
    Article number231917
    JournalApplied Physics Letters
    Volume89
    Issue number23
    DOIs
    Publication statusPublished - 2006

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