Structural characterization of amorphised InAs with synchrotron radiation

G. de M. Azevedo; M. C. Ridgway; K. M. Yu; C. J. Glover; G. J. Foran

doi:10.1016/S0168-583X(02)00471-8

Structural characterization of amorphised InAs with synchrotron radiation

G. de M. Azevedo, M. C. Ridgway, K. M. Yu, C. J. Glover, G. J. Foran

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.

Original language	English
Pages (from-to)	851-855
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(02)00471-8
Publication status	Published - May 2002

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title = "Structural characterization of amorphised InAs with synchrotron radiation",

abstract = "Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.",

keywords = "Amorphous solids, EXAFS, InAs, Ion implantation",

author = "Azevedo, {G. de M.} and Ridgway, {M. C.} and Yu, {K. M.} and Glover, {C. J.} and Foran, {G. J.}",

year = "2002",

month = may,

doi = "10.1016/S0168-583X(02)00471-8",

language = "English",

volume = "190",

pages = "851--855",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Structural characterization of amorphised InAs with synchrotron radiation

AU - Azevedo, G. de M.

AU - Ridgway, M. C.

AU - Yu, K. M.

AU - Glover, C. J.

AU - Foran, G. J.

PY - 2002/5

Y1 - 2002/5

N2 - Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.

AB - Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.

KW - Amorphous solids

KW - EXAFS

KW - InAs

KW - Ion implantation

UR - http://www.scopus.com/inward/record.url?scp=0036568970&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(02)00471-8

DO - 10.1016/S0168-583X(02)00471-8

M3 - Article

SN - 0168-583X

VL - 190

SP - 851

EP - 855

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Structural characterization of amorphised InAs with synchrotron radiation

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