Structural characterization of amorphized InP: Evidence for chemical disorder

C. J. Glover*, M. C. Ridgway, K. M. Yu, G. J. Foran, T. W. Lee, Y. Moon, E. Yoon

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.

    Original languageEnglish
    Pages (from-to)1713-1715
    Number of pages3
    JournalApplied Physics Letters
    Volume74
    Issue number12
    DOIs
    Publication statusPublished - 22 Mar 1999

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