Structural characterization of amorphized InP: Evidence for chemical disorder

C. J. Glover; M. C. Ridgway; K. M. Yu; G. J. Foran; T. W. Lee; Y. Moon; E. Yoon

doi:10.1063/1.123664

Structural characterization of amorphized InP: Evidence for chemical disorder

C. J. Glover^*
, M. C. Ridgway
, K. M. Yu
, G. J. Foran
, T. W. Lee
, Y. Moon
, E. Yoon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.

Original language	English
Pages (from-to)	1713-1715
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	12
DOIs	https://doi.org/10.1063/1.123664
Publication status	Published - 22 Mar 1999

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title = "Structural characterization of amorphized InP: Evidence for chemical disorder",

abstract = "Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.",

author = "Glover, \{C. J.\} and Ridgway, \{M. C.\} and Yu, \{K. M.\} and Foran, \{G. J.\} and Lee, \{T. W.\} and Y. Moon and E. Yoon",

year = "1999",

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T2 - Evidence for chemical disorder

AU - Glover, C. J.

AU - Ridgway, M. C.

AU - Yu, K. M.

AU - Foran, G. J.

AU - Lee, T. W.

AU - Moon, Y.

AU - Yoon, E.

PY - 1999/3/22

Y1 - 1999/3/22

N2 - Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.

AB - Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.

UR - https://www.scopus.com/pages/publications/0032613770

U2 - 10.1063/1.123664

DO - 10.1063/1.123664

M3 - Article

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VL - 74

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EP - 1715

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Structural characterization of amorphized InP: Evidence for chemical disorder

Abstract

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