Structural characterization of femtosecond laser modified regions inside sapphire

Saulius Juodkazis; Shinji Kohara; Yasuo Ohishi; Norihisa Hirao; Arturas Vailionis; Vygantas Mizeikis; Akira Saito; Andrei Rode

doi:10.1166/jnn.2011.3919

Structural characterization of femtosecond laser modified regions inside sapphire

Saulius Juodkazis^*, Shinji Kohara, Yasuo Ohishi, Norihisa Hirao, Arturas Vailionis, Vygantas Mizeikis, Akira Saito, Andrei Rode

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.

Original language	English
Pages (from-to)	2931-2936
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	4
DOIs	https://doi.org/10.1166/jnn.2011.3919
Publication status	Published - 2011

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title = "Structural characterization of femtosecond laser modified regions inside sapphire",

abstract = "We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.",

keywords = "Femtosecond laser nano-/micro-fabrication, Nano-structured materials, Phase transitions, Sapphire",

author = "Saulius Juodkazis and Shinji Kohara and Yasuo Ohishi and Norihisa Hirao and Arturas Vailionis and Vygantas Mizeikis and Akira Saito and Andrei Rode",

year = "2011",

doi = "10.1166/jnn.2011.3919",

language = "English",

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pages = "2931--2936",

journal = "Journal of Nanoscience and Nanotechnology",

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publisher = "American Scientific Publishers",

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T1 - Structural characterization of femtosecond laser modified regions inside sapphire

AU - Juodkazis, Saulius

AU - Kohara, Shinji

AU - Ohishi, Yasuo

AU - Hirao, Norihisa

AU - Vailionis, Arturas

AU - Mizeikis, Vygantas

AU - Saito, Akira

AU - Rode, Andrei

PY - 2011

Y1 - 2011

N2 - We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.

AB - We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.

KW - Femtosecond laser nano-/micro-fabrication

KW - Nano-structured materials

KW - Phase transitions

KW - Sapphire

UR - http://www.scopus.com/inward/record.url?scp=80051931007&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.3919

DO - 10.1166/jnn.2011.3919

M3 - Article

SN - 1533-4880

VL - 11

SP - 2931

EP - 2936

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 4

ER -

Structural characterization of femtosecond laser modified regions inside sapphire

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