Abstract
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 × 1011-2 × 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAXS and EXAFS. The EXAFS results show that the embedded Ge NCs are rendered amorphous at fluences ∼40 times lower than bulk crystalline Ge (c-Ge). No significant changes in the size or depth distribution of the NCs are observed for all irradiation fluences. Compared to c-Ge, the higher-energy structural state of the NCs prior to irradiation and the presence of the nanocrystal/matrix interface are considered the main causes for the peculiar amorphisation behavior of embedded Ge NCs.
Original language | English |
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Pages (from-to) | 3153-3157 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 266 |
Issue number | 12-13 |
DOIs | |
Publication status | Published - Jun 2008 |