Structural Disorder in Ion-implanted AlxGa1-xN

Sergei Kucheyev; Jim Williams; Jin Zou; Gang Li; Chennupati Jagadish; M O Manasreh; M Pophristic; S Guo; I T Ferguson

doi:10.1063/1.1445478

Structural Disorder in Ion-implanted Al_xGa_1-xN

Sergei Kucheyev, Jim Williams, Jin Zou, Gang Li, Chennupati Jagadish, M O Manasreh, M Pophristic, S Guo, I T Ferguson

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The accumulation of structural damage in AlxGa1-xN films (with x=0.05-0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN.

Original language	English
Pages (from-to)	787-789
Journal	Applied Physics Letters
Volume	80
Issue number	5
DOIs	https://doi.org/10.1063/1.1445478
Publication status	Published - 2002

Access to Document

10.1063/1.1445478

https://www.scopus.com/record/display.uri?eid=2-s2.0-79956041338&origin=inward

Cite this

@article{74fec0160d874b4cb880b207ede99fd4,

title = "Structural Disorder in Ion-implanted AlxGa1-xN",

abstract = "The accumulation of structural damage in AlxGa1-xN films (with x=0.05-0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN.",

author = "Sergei Kucheyev and Jim Williams and Jin Zou and Gang Li and Chennupati Jagadish and Manasreh, {M O} and M Pophristic and S Guo and Ferguson, {I T}",

year = "2002",

doi = "10.1063/1.1445478",

language = "English",

volume = "80",

pages = "787--789",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics (AIP)",

number = "5",

}

TY - JOUR

T1 - Structural Disorder in Ion-implanted AlxGa1-xN

AU - Kucheyev, Sergei

AU - Williams, Jim

AU - Zou, Jin

AU - Li, Gang

AU - Jagadish, Chennupati

AU - Manasreh, M O

AU - Pophristic, M

AU - Guo, S

AU - Ferguson, I T

PY - 2002

Y1 - 2002

N2 - The accumulation of structural damage in AlxGa1-xN films (with x=0.05-0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN.

AB - The accumulation of structural damage in AlxGa1-xN films (with x=0.05-0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN.

U2 - 10.1063/1.1445478

DO - 10.1063/1.1445478

M3 - Article

VL - 80

SP - 787

EP - 789

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Structural Disorder in Ion-implanted AlxGa1-xN

Abstract

Access to Document

Fingerprint

Cite this

Structural Disorder in Ion-implanted Al_xGa_1-xN