Structural, electrical, and optical analysis of ion implanted semi-insulating InP

C. Carmody*, H. H. Tan, C. Jagadish, O. Douhéret, K. Maknys, S. Anand, J. Zou, L. Dao, M. Gal

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.

    Original languageEnglish
    Pages (from-to)477-482
    Number of pages6
    JournalJournal of Applied Physics
    Volume95
    Issue number2
    DOIs
    Publication statusPublished - 15 Jan 2004

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