Structural, electrical, and optical analysis of ion implanted semi-insulating InP

C. Carmody; H. H. Tan; C. Jagadish; O. Douhéret; K. Maknys; S. Anand; J. Zou; L. Dao; M. Gal

doi:10.1063/1.1633349

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

C. Carmody^*, H. H. Tan, C. Jagadish, O. Douhéret, K. Maknys, S. Anand, J. Zou, L. Dao, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.

Original language	English
Pages (from-to)	477-482
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	2
DOIs	https://doi.org/10.1063/1.1633349
Publication status	Published - 15 Jan 2004

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@article{07621a1fc08e43c59f3496baae132b53,

title = "Structural, electrical, and optical analysis of ion implanted semi-insulating InP",

abstract = "The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.",

author = "C. Carmody and Tan, \{H. H.\} and C. Jagadish and O. Douh{\'e}ret and K. Maknys and S. Anand and J. Zou and L. Dao and M. Gal",

year = "2004",

month = jan,

day = "15",

doi = "10.1063/1.1633349",

language = "English",

volume = "95",

pages = "477--482",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Structural, electrical, and optical analysis of ion implanted semi-insulating InP

AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Douhéret, O.

AU - Maknys, K.

AU - Anand, S.

AU - Zou, J.

AU - Dao, L.

AU - Gal, M.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.

AB - The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass.

UR - https://www.scopus.com/pages/publications/0742303030

U2 - 10.1063/1.1633349

DO - 10.1063/1.1633349

M3 - Article

SN - 0021-8979

VL - 95

SP - 477

EP - 482

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

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