Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP

C Carmody; Hoe Tan; Chennupati Jagadish; Jin Zou; Lap Van Dao; Michael Gal

Structural, Electrical and Optical Properties of MEV As⁺ Ion Implanted InP

C Carmody, Hoe Tan, Chennupati Jagadish, Jin Zou, Lap Van Dao, Michael Gal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Editors	Michael Gal
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	487-490
Edition	Peer Reviewed
ISBN (Print)	0780375718
Publication status	Published - 2003
Event	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) - Sydney Australia, Australia Duration: 1 Jan 2003 → …

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002)
Country/Territory	Australia
Period	1/01/03 → …
Other	December 11-13 2002

Cite this

@inproceedings{88e9512526154a31959a1a34d2103948,

title = "Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP",

author = "C Carmody and Hoe Tan and Chennupati Jagadish and Jin Zou and Dao, {Lap Van} and Michael Gal",

year = "2003",

language = "English",

isbn = "0780375718",

pages = "487--490",

editor = "{Michael Gal}",

booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

edition = "Peer Reviewed",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) ; Conference date: 01-01-2003",

}

Carmody, C, Tan, H , Jagadish, C, Zou, J, Dao, LV & Gal, M 2003, Structural, Electrical and Optical Properties of MEV As⁺ Ion Implanted InP. in MG (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. Peer Reviewed edn, Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, pp. 487-490, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002) , Australia, 1/01/03.

Structural, Electrical and Optical Properties of MEV As⁺ Ion Implanted InP. / Carmody, C; Tan, Hoe ; Jagadish, Chennupati et al.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. ed. / Michael Gal. Peer Reviewed. ed. Piscataway, NJ: Institute of Electrical and Electronics Engineers Inc., 2003. p. 487-490.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Structural, Electrical and Optical Properties of MEV As+ Ion Implanted InP

AU - Carmody, C

AU - Tan, Hoe

AU - Jagadish, Chennupati

AU - Zou, Jin

AU - Dao, Lap Van

AU - Gal, Michael

PY - 2003

Y1 - 2003

M3 - Conference contribution

SN - 0780375718

SP - 487

EP - 490

BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

A2 - null, Michael Gal

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002)

Y2 - 1 January 2003

ER -