TY - JOUR
T1 - Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
AU - Wang, Ya
AU - Liao, Zhiming
AU - Xu, Hongyi
AU - Xiu, Faxian
AU - Kou, Xufeng
AU - Wang, Yong
AU - Wang, Kang L.
AU - Drennan, John
AU - Zou, Jin
PY - 2011
Y1 - 2011
N2 - GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking faults, which can be explained by the fact that Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, the GeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots to ordered coherent nanodots and then to ordered nanocolumns.
AB - GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking faults, which can be explained by the fact that Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, the GeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots to ordered coherent nanodots and then to ordered nanocolumns.
KW - Ferromagnetic semiconductor
KW - Magnetic precipitation
KW - Molecular beam epitaxy
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84862961209&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-6-624
DO - 10.1186/1556-276X-6-624
M3 - Article
AN - SCOPUS:84862961209
SN - 1931-7573
VL - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 624
ER -