Structural modifications in amorphous Ge produced by ion implantation

I. D. Desnica-Frankovi; K. Furi; U. V. Desnica; M. C. Ridgway; C. J. Glover

doi:10.1016/S0168-583X(00)00489-4

Structural modifications in amorphous Ge produced by ion implantation

I. D. Desnica-Frankovi, K. Furi, U. V. Desnica, M. C. Ridgway, C. J. Glover

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 10¹² to 3 × 10¹⁶ cm^-2 ⁷⁴Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphization threshold dose (≃10¹⁴ cm^-2), a dose-dependent evolution of the amorphous matrix could be followed. However, changes induced in samples implanted at -196°C (LN) differed from those implanted at 21°C. Characteristic Raman parameters relevant for disorder assessment suggest relaxation of the amorphous network with ion dose in samples implanted at RT in contrast to the LN temperature samples, in which additional implantation produces further disordering. These findings are consistent with the results obtained by extended X-ray absorption fine structure spectroscopy (EXAFS) wherein again both a dose- and temperature-dependent evolution of the inter-atomic distance distribution was observed.

Original language	English
Pages (from-to)	192-195
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	178
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(00)00489-4
Publication status	Published - May 2001
Event	Materials Science with Ion Beams - Strasbourg, France Duration: 30 May 2000 → 2 Jun 2000

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@article{a37caeaab41242fda9231b44de5db78b,

title = "Structural modifications in amorphous Ge produced by ion implantation",

abstract = "Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-2 74Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphization threshold dose (≃1014 cm-2), a dose-dependent evolution of the amorphous matrix could be followed. However, changes induced in samples implanted at -196°C (LN) differed from those implanted at 21°C. Characteristic Raman parameters relevant for disorder assessment suggest relaxation of the amorphous network with ion dose in samples implanted at RT in contrast to the LN temperature samples, in which additional implantation produces further disordering. These findings are consistent with the results obtained by extended X-ray absorption fine structure spectroscopy (EXAFS) wherein again both a dose- and temperature-dependent evolution of the inter-atomic distance distribution was observed.",

keywords = "Amorphous Ge, Disorder, EXAFS, Ion implantation, Raman spectroscopy",

author = "Desnica-Frankovi, {I. D.} and K. Furi and Desnica, {U. V.} and Ridgway, {M. C.} and Glover, {C. J.}",

year = "2001",

month = may,

doi = "10.1016/S0168-583X(00)00489-4",

language = "English",

volume = "178",

pages = "192--195",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Materials Science with Ion Beams ; Conference date: 30-05-2000 Through 02-06-2000",

}

TY - JOUR

T1 - Structural modifications in amorphous Ge produced by ion implantation

AU - Desnica-Frankovi, I. D.

AU - Furi, K.

AU - Desnica, U. V.

AU - Ridgway, M. C.

AU - Glover, C. J.

PY - 2001/5

Y1 - 2001/5

N2 - Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-2 74Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphization threshold dose (≃1014 cm-2), a dose-dependent evolution of the amorphous matrix could be followed. However, changes induced in samples implanted at -196°C (LN) differed from those implanted at 21°C. Characteristic Raman parameters relevant for disorder assessment suggest relaxation of the amorphous network with ion dose in samples implanted at RT in contrast to the LN temperature samples, in which additional implantation produces further disordering. These findings are consistent with the results obtained by extended X-ray absorption fine structure spectroscopy (EXAFS) wherein again both a dose- and temperature-dependent evolution of the inter-atomic distance distribution was observed.

AB - Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-2 74Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphization threshold dose (≃1014 cm-2), a dose-dependent evolution of the amorphous matrix could be followed. However, changes induced in samples implanted at -196°C (LN) differed from those implanted at 21°C. Characteristic Raman parameters relevant for disorder assessment suggest relaxation of the amorphous network with ion dose in samples implanted at RT in contrast to the LN temperature samples, in which additional implantation produces further disordering. These findings are consistent with the results obtained by extended X-ray absorption fine structure spectroscopy (EXAFS) wherein again both a dose- and temperature-dependent evolution of the inter-atomic distance distribution was observed.

KW - Amorphous Ge

KW - Disorder

KW - EXAFS

KW - Ion implantation

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0035333168&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(00)00489-4

DO - 10.1016/S0168-583X(00)00489-4

M3 - Conference article

SN - 0168-583X

VL - 178

SP - 192

EP - 195

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Materials Science with Ion Beams

Y2 - 30 May 2000 through 2 June 2000

ER -

Structural modifications in amorphous Ge produced by ion implantation

Abstract

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