Structural perturbations within Ge nanocrystals in silica

A. Cheung; G. De M. Azevedo; C. J. Glover; D. J. Llewellyn; R. G. Elliman; G. J. Foran; M. C. Ridgway

doi:10.1063/1.1639136

Structural perturbations within Ge nanocrystals in silica

A. Cheung^*, G. De M. Azevedo, C. J. Glover, D. J. Llewellyn, R. G. Elliman, G. J. Foran, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.

Original language	English
Pages (from-to)	278-280
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	2
DOIs	https://doi.org/10.1063/1.1639136
Publication status	Published - 12 Jan 2004

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title = "Structural perturbations within Ge nanocrystals in silica",

abstract = "Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.",

author = "A. Cheung and Azevedo, \{G. De M.\} and Glover, \{C. J.\} and Llewellyn, \{D. J.\} and Elliman, \{R. G.\} and Foran, \{G. J.\} and Ridgway, \{M. C.\}",

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journal = "Applied Physics Letters",

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T1 - Structural perturbations within Ge nanocrystals in silica

AU - Cheung, A.

AU - Azevedo, G. De M.

AU - Glover, C. J.

AU - Llewellyn, D. J.

AU - Elliman, R. G.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2004/1/12

Y1 - 2004/1/12

N2 - Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.

AB - Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. However, EXAFS measurements demonstrate the presence of atomic-scale structural perturbations in Ge nanocrystals relative to bulk crystalline material. These perturbations are apparent as both bond length and bond angle distortions and attributed to the influences of interfacial-bonding-induced strain and a matrix-induced compression.

UR - https://www.scopus.com/pages/publications/0842333233

U2 - 10.1063/1.1639136

DO - 10.1063/1.1639136

M3 - Article

SN - 0003-6951

VL - 84

SP - 278

EP - 280

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Structural perturbations within Ge nanocrystals in silica

Abstract

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