Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

C. J. Glover; M. C. Ridgway; K. M. Yu; G. J. Foran; D. Desnica-Frankovic; C. Clerc; J. L. Hansen; A. Nylandsted-Larsen

doi:10.1103/PhysRevB.63.073204

Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

C. J. Glover, M. C. Ridgway, K. M. Yu, G. J. Foran, D. Desnica-Frankovic, C. Clerc, J. L. Hansen, A. Nylandsted-Larsen

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Abstract

Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 �C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.63.073204
Publication status	Published - 31 Jan 2001

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title = "Structural-relaxation-induced bond length and bond angle changes in amorphized Ge",

abstract = "Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 �C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.",

author = "Glover, {C. J.} and Ridgway, {M. C.} and Yu, {K. M.} and Foran, {G. J.} and D. Desnica-Frankovic and C. Clerc and Hansen, {J. L.} and A. Nylandsted-Larsen",

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T1 - Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

AU - Glover, C. J.

AU - Ridgway, M. C.

AU - Yu, K. M.

AU - Foran, G. J.

AU - Desnica-Frankovic, D.

AU - Clerc, C.

AU - Hansen, J. L.

AU - Nylandsted-Larsen, A.

PY - 2001/1/31

Y1 - 2001/1/31

N2 - Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 �C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.

AB - Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 �C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.

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DO - 10.1103/PhysRevB.63.073204

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Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

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