Structure of amorphous silicon investigated by EXAFS

C. J. Glover; G. J. Foran; M. C. Ridgway

doi:10.1016/S0168-583X(02)01544-6

Structure of amorphous silicon investigated by EXAFS

C. J. Glover^*
, G. J. Foran
, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed.

Original language	English
Pages (from-to)	195-199
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	199
DOIs	https://doi.org/10.1016/S0168-583X(02)01544-6
Publication status	Published - Jan 2003

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title = "Structure of amorphous silicon investigated by EXAFS",

abstract = "The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed.",

keywords = "Amorphous semiconductors, Extended X-ray absorption fine structure spectroscopy, Silicon",

author = "Glover, \{C. J.\} and Foran, \{G. J.\} and Ridgway, \{M. C.\}",

year = "2003",

month = jan,

doi = "10.1016/S0168-583X(02)01544-6",

language = "English",

volume = "199",

pages = "195--199",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Structure of amorphous silicon investigated by EXAFS

AU - Glover, C. J.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2003/1

Y1 - 2003/1

N2 - The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed.

AB - The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed.

KW - Amorphous semiconductors

KW - Extended X-ray absorption fine structure spectroscopy

KW - Silicon

UR - https://www.scopus.com/pages/publications/0037243215

U2 - 10.1016/S0168-583X(02)01544-6

DO - 10.1016/S0168-583X(02)01544-6

M3 - Article

SN - 0168-583X

VL - 199

SP - 195

EP - 199

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Structure of amorphous silicon investigated by EXAFS

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