Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R. Harding; G. Davies; P. G. Coleman; C. P. Burrows; J. Wong-Leung

doi:10.1016/j.physb.2003.09.152

Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

R. Harding^*, G. Davies, P. G. Coleman, C. P. Burrows, J. Wong-Leung

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 10¹²-10¹⁴cm^-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

Original language	English
Pages (from-to)	738-742
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.152
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

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@article{2b5372103d4e464eb7060682ad86d578,

title = "Study of defects in ion-implanted silicon using photoluminescence and positron annihilation",

abstract = "We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012-1014cm-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.",

keywords = "Ion implantation, PAS, Photoluminescence, Silicon",

author = "R. Harding and G. Davies and Coleman, {P. G.} and Burrows, {C. P.} and J. Wong-Leung",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.152",

language = "English",

volume = "340-342",

pages = "738--742",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

AU - Harding, R.

AU - Davies, G.

AU - Coleman, P. G.

AU - Burrows, C. P.

AU - Wong-Leung, J.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012-1014cm-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

AB - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 1012-1014cm-2 measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600°C and assess the circumstances in which PL can be used as a quantitative technique.

KW - Ion implantation

KW - PAS

KW - Photoluminescence

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0347764762&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.152

DO - 10.1016/j.physb.2003.09.152

M3 - Conference article

SN - 0921-4526

VL - 340-342

SP - 738

EP - 742

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Abstract

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