Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

L. Fu; R. W. V.d. Heijden; H. H. Tan; C. Jagadish; L. V. Dao; M. Gal

doi:10.1063/1.1449522

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

L. Fu^*, R. W. V.d. Heijden, H. H. Tan, C. Jagadish, L. V. Dao, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO₂ layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.

Original language	English
Pages (from-to)	1171-1173
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1449522
Publication status	Published - 18 Feb 2002

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title = "Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers",

abstract = "The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.",

author = "L. Fu and {V.d. Heijden}, {R. W.} and Tan, {H. H.} and C. Jagadish and Dao, {L. V.} and M. Gal",

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AU - Fu, L.

AU - V.d. Heijden, R. W.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Dao, L. V.

AU - Gal, M.

PY - 2002/2/18

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N2 - The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.

AB - The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.

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JF - Applied Physics Letters

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Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

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