TY - JOUR
T1 - Study of intermixing in InGaAs/(Al)GaAs quantum well and quantum dot structures for optoelectronic/ photonic integration
AU - Fu, L.
AU - Lever, P.
AU - Tan, H. H.
AU - Jagadish, C.
AU - Reece, P.
AU - Gal, M.
PY - 2005/10
Y1 - 2005/10
N2 - Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures and annealing at different temperatures. In order to obtain large differential energy shifts for device integration using both methods, the essential issue of suppression of thermal interdiffusion using a TiO2 capping layer was also addressed.
AB - Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures and annealing at different temperatures. In order to obtain large differential energy shifts for device integration using both methods, the essential issue of suppression of thermal interdiffusion using a TiO2 capping layer was also addressed.
UR - http://www.scopus.com/inward/record.url?scp=27544455783&partnerID=8YFLogxK
U2 - 10.1049/ip-cds:20045053
DO - 10.1049/ip-cds:20045053
M3 - Article
SN - 1350-2409
VL - 152
SP - 491
EP - 496
JO - IEE Proceedings: Circuits, Devices and Systems
JF - IEE Proceedings: Circuits, Devices and Systems
IS - 5
ER -