Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

S. C. Du; L. Fu; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2010.5699772

Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	47-48
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699772
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699772

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Du, S. C., Fu, L., Tan, H. H., & Jagadish, C. (2010). Study of intermixing mechanism in AlInGaAs/InGaAs quantum well. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 47-48). Article 5699772 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699772

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title = "Study of intermixing mechanism in AlInGaAs/InGaAs quantum well",

abstract = "In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.",

author = "Du, {S. C.} and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699772",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "47--48",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Du, SC, Fu, L , Tan, HH & Jagadish, C 2010, Study of intermixing mechanism in AlInGaAs/InGaAs quantum well. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699772, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 47-48, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699772

Study of intermixing mechanism in AlInGaAs/InGaAs quantum well. / Du, S. C.; Fu, L.; Tan, H. H. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 47-48 5699772 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

AU - Du, S. C.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

AB - In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

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U2 - 10.1109/COMMAD.2010.5699772

DO - 10.1109/COMMAD.2010.5699772

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 47

EP - 48

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

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