Study of MOCVD grown Hg1-xCdxTe by ion beam techniques

Peter N. Johnston; Salvy P. Russo; Robert G. Elliman; Geoffrey N. Pain

doi:10.1016/0168-583X(93)95396-M

Study of MOCVD grown Hg_1-xCd_xTe by ion beam techniques

Peter N. Johnston^*, Salvy P. Russo, Robert G. Elliman, Geoffrey N. Pain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The environment inside a metal organic chemical vapour deposition (MOCVD) reactor is necessarily rich in carbon and hydrogen, both of which can be important dopants in semiconductor materials. The current work focuses on levels of carbon incorporation into thin films and the relationship between carbon concentration and thermodynamic processes. Carbon levels have been determined using the reaction ¹²C(³He,p₀)¹⁴N.

Original language	English
Pages (from-to)	490-492
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	79
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(93)95396-M
Publication status	Published - 2 Jun 1993

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title = "Study of MOCVD grown Hg1-xCdxTe by ion beam techniques",

abstract = "The environment inside a metal organic chemical vapour deposition (MOCVD) reactor is necessarily rich in carbon and hydrogen, both of which can be important dopants in semiconductor materials. The current work focuses on levels of carbon incorporation into thin films and the relationship between carbon concentration and thermodynamic processes. Carbon levels have been determined using the reaction 12C(3He,p0)14N.",

author = "Johnston, {Peter N.} and Russo, {Salvy P.} and Elliman, {Robert G.} and Pain, {Geoffrey N.}",

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AU - Johnston, Peter N.

AU - Russo, Salvy P.

AU - Elliman, Robert G.

AU - Pain, Geoffrey N.

PY - 1993/6/2

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N2 - The environment inside a metal organic chemical vapour deposition (MOCVD) reactor is necessarily rich in carbon and hydrogen, both of which can be important dopants in semiconductor materials. The current work focuses on levels of carbon incorporation into thin films and the relationship between carbon concentration and thermodynamic processes. Carbon levels have been determined using the reaction 12C(3He,p0)14N.

AB - The environment inside a metal organic chemical vapour deposition (MOCVD) reactor is necessarily rich in carbon and hydrogen, both of which can be important dopants in semiconductor materials. The current work focuses on levels of carbon incorporation into thin films and the relationship between carbon concentration and thermodynamic processes. Carbon levels have been determined using the reaction 12C(3He,p0)14N.

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SN - 0168-583X

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SP - 490

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Study of MOCVD grown Hg_1-xCd_xTe by ion beam techniques

Abstract

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