Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

J. Yin; X. Wang; Z. Yin; M. Li; G. Li; S. Yang

doi:10.1016/S0030-3992(01)00070-6

Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

J. Yin^*, X. Wang, Z. Yin, M. Li, G. Li, S. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 × 10¹⁰ cm^-2 at 4 monolayers InAs layer.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	Optics and Laser Technology
Volume	33
Issue number	7
DOIs	https://doi.org/10.1016/S0030-3992(01)00070-6
Publication status	Published - Oct 2001
Externally published	Yes

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10.1016/S0030-3992(01)00070-6

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@article{e17a164ce13b4e34a022d5b22e9b85a0,

title = "Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP",

abstract = "We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 × 1010 cm-2 at 4 monolayers InAs layer.",

keywords = "Ordered growth, Self-assembled quantum dots, Tensile strained",

author = "J. Yin and X. Wang and Z. Yin and M. Li and G. Li and S. Yang",

year = "2001",

month = oct,

doi = "10.1016/S0030-3992(01)00070-6",

language = "English",

volume = "33",

pages = "507--509",

journal = "Optics and Laser Technology",

issn = "0030-3992",

publisher = "Elsevier Ltd.",

number = "7",

}

TY - JOUR

T1 - Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

AU - Yin, J.

AU - Wang, X.

AU - Yin, Z.

AU - Li, M.

AU - Li, G.

AU - Yang, S.

PY - 2001/10

Y1 - 2001/10

N2 - We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 × 1010 cm-2 at 4 monolayers InAs layer.

AB - We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 × 1010 cm-2 at 4 monolayers InAs layer.

KW - Ordered growth

KW - Self-assembled quantum dots

KW - Tensile strained

UR - http://www.scopus.com/inward/record.url?scp=0035477846&partnerID=8YFLogxK

U2 - 10.1016/S0030-3992(01)00070-6

DO - 10.1016/S0030-3992(01)00070-6

M3 - Article

SN - 0030-3992

VL - 33

SP - 507

EP - 509

JO - Optics and Laser Technology

JF - Optics and Laser Technology

IS - 7

ER -

Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

Abstract

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