Submicrometer-thick low-loss AS2S3 planar waveguides for nonlinear optical devices

D. Y. Choi; S. Madden; D. A. Bulla; R. Wang; A. Rode; B. Luther-Davies

doi:10.1109/LPT.2010.2040170

Submicrometer-thick low-loss AS₂S₃ planar waveguides for nonlinear optical devices

D. Y. Choi^*, S. Madden, D. A. Bulla, R. Wang, A. Rode, B. Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

We describe a fabrication process for and the characterization of submicrometer-thick As₂S₃ waveguides. Poly(methylmethacrylate) and bottom antireflective coating were employed as thin protective layers prior to photoresist patterning in order to prevent the attack of the As₂S₃ film by an alkaline developer. Propagation losses of ∼0.2 and 0.6 dB/cm were measured for 4- and 2-μm-wide waveguides fabricated from 0.85-jum-thick films. Slightly higher loss in the transverse-magnetic mode may be the result of surface scattering of the rougher etched sidewalls.

Original language	English
Article number	5401068
Pages (from-to)	495-497
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2010.2040170
Publication status	Published - 1 Apr 2010

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title = "Submicrometer-thick low-loss AS2S3 planar waveguides for nonlinear optical devices",

abstract = "We describe a fabrication process for and the characterization of submicrometer-thick As2S3 waveguides. Poly(methylmethacrylate) and bottom antireflective coating were employed as thin protective layers prior to photoresist patterning in order to prevent the attack of the As2S3 film by an alkaline developer. Propagation losses of ∼0.2 and 0.6 dB/cm were measured for 4- and 2-μm-wide waveguides fabricated from 0.85-jum-thick films. Slightly higher loss in the transverse-magnetic mode may be the result of surface scattering of the rougher etched sidewalls.",

keywords = "Amorphous semiconductors, Fabrication, Nonlinear optic devices, Optical waveguides",

author = "Choi, {D. Y.} and S. Madden and Bulla, {D. A.} and R. Wang and A. Rode and B. Luther-Davies",

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T1 - Submicrometer-thick low-loss AS2S3 planar waveguides for nonlinear optical devices

AU - Choi, D. Y.

AU - Madden, S.

AU - Bulla, D. A.

AU - Wang, R.

AU - Rode, A.

AU - Luther-Davies, B.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - We describe a fabrication process for and the characterization of submicrometer-thick As2S3 waveguides. Poly(methylmethacrylate) and bottom antireflective coating were employed as thin protective layers prior to photoresist patterning in order to prevent the attack of the As2S3 film by an alkaline developer. Propagation losses of ∼0.2 and 0.6 dB/cm were measured for 4- and 2-μm-wide waveguides fabricated from 0.85-jum-thick films. Slightly higher loss in the transverse-magnetic mode may be the result of surface scattering of the rougher etched sidewalls.

AB - We describe a fabrication process for and the characterization of submicrometer-thick As2S3 waveguides. Poly(methylmethacrylate) and bottom antireflective coating were employed as thin protective layers prior to photoresist patterning in order to prevent the attack of the As2S3 film by an alkaline developer. Propagation losses of ∼0.2 and 0.6 dB/cm were measured for 4- and 2-μm-wide waveguides fabricated from 0.85-jum-thick films. Slightly higher loss in the transverse-magnetic mode may be the result of surface scattering of the rougher etched sidewalls.

KW - Amorphous semiconductors

KW - Fabrication

KW - Nonlinear optic devices

KW - Optical waveguides

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DO - 10.1109/LPT.2010.2040170

M3 - Article

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EP - 497

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

M1 - 5401068

ER -

Submicrometer-thick low-loss AS₂S₃ planar waveguides for nonlinear optical devices

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