Superacid Passivation of Crystalline Silicon Surfaces

James Bullock, Daisuke Kiriya, Nicholas Grant, Angelica Azcatl, Mark Hettick, Teng Kho, Pheng Phang, Hang C. Sio, Di Yan, Daniel Macdonald, Manuel A. Quevedo-Lopez, Robert M. Wallace, Andres Cuevas, Ali Javey*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)

    Abstract

    The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

    Original languageEnglish
    Pages (from-to)24205-24211
    Number of pages7
    JournalACS applied materials & interfaces
    Volume8
    Issue number36
    DOIs
    Publication statusPublished - 14 Sept 2016

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