Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

L. Fu; P. Lever; H. H. Tan; C. Jagadish; P. Reece; M. Gal

doi:10.1063/1.1569046

Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

L. Fu^*, P. Lever, H. H. Tan, C. Jagadish, P. Reece, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

The dielectric layer of titanium dioxide was used for analyzing suppression of interdiffusion in InGaAs/GaAs quantum dots. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped reference sample. With TiO₂ deposited on top, IFVD and thermal interdiffusion were suppressed to different extents with the variation of SiO₂ thickness.

Original language	English
Pages (from-to)	2613-2615
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	16
DOIs	https://doi.org/10.1063/1.1569046
Publication status	Published - 21 Apr 2003

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title = "Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide",

abstract = "The dielectric layer of titanium dioxide was used for analyzing suppression of interdiffusion in InGaAs/GaAs quantum dots. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped reference sample. With TiO2 deposited on top, IFVD and thermal interdiffusion were suppressed to different extents with the variation of SiO2 thickness.",

author = "L. Fu and P. Lever and Tan, \{H. H.\} and C. Jagadish and P. Reece and M. Gal",

year = "2003",

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journal = "Applied Physics Letters",

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T1 - Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

AU - Fu, L.

AU - Lever, P.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Reece, P.

AU - Gal, M.

PY - 2003/4/21

Y1 - 2003/4/21

N2 - The dielectric layer of titanium dioxide was used for analyzing suppression of interdiffusion in InGaAs/GaAs quantum dots. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped reference sample. With TiO2 deposited on top, IFVD and thermal interdiffusion were suppressed to different extents with the variation of SiO2 thickness.

AB - The dielectric layer of titanium dioxide was used for analyzing suppression of interdiffusion in InGaAs/GaAs quantum dots. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped reference sample. With TiO2 deposited on top, IFVD and thermal interdiffusion were suppressed to different extents with the variation of SiO2 thickness.

UR - https://www.scopus.com/pages/publications/0037545963

U2 - 10.1063/1.1569046

DO - 10.1063/1.1569046

M3 - Article

SN - 0003-6951

VL - 82

SP - 2613

EP - 2615

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

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