Suppression of the internal electric field effects in ZnO/Zn 0.7Mg0.3O quantum wells by ion-implantation induced intermixing

J. A. Davis; L. V. Dao; X. Wen; C. Ticknor; P. Hannaford; V. A. Coleman; H. H. Tan; C. Jagadish; K. Koike; S. Sasa; M. Inoue; M. Yano

doi:10.1088/0957-4484/19/05/055205

Suppression of the internal electric field effects in ZnO/Zn _0.7Mg_0.3O quantum wells by ion-implantation induced intermixing

J. A. Davis^*, L. V. Dao, X. Wen, C. Ticknor, P. Hannaford, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (SciVal)

Abstract

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.

Original language	English
Article number	055205
Journal	Nanotechnology
Volume	19
Issue number	5
DOIs	https://doi.org/10.1088/0957-4484/19/05/055205
Publication status	Published - 6 Feb 2008

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title = "Suppression of the internal electric field effects in ZnO/Zn 0.7Mg0.3O quantum wells by ion-implantation induced intermixing",

abstract = "Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.",

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AU - Davis, J. A.

AU - Dao, L. V.

AU - Wen, X.

AU - Ticknor, C.

AU - Hannaford, P.

AU - Coleman, V. A.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Koike, K.

AU - Sasa, S.

AU - Inoue, M.

AU - Yano, M.

PY - 2008/2/6

Y1 - 2008/2/6

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AB - Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.

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VL - 19

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JF - Nanotechnology

IS - 5

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ER -

Suppression of the internal electric field effects in ZnO/Zn _0.7Mg_0.3O quantum wells by ion-implantation induced intermixing

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