Surface oxidation of Ge33As12Se55 films

Rong Ping Wang, Andrei Rode, Duk Yong Choi, Barry Luther-Davies

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Ge33As12Se33 films deposited by ultrafast pulse laser deposition were annealed at various temperatures and pressures, and the dependence of the surface oxidation on the processing conditions was investigated by X-ray photoelectron spectroscopy (XPS). We found that even as-grown film contains a thin oxidized surface and the oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thicknesses of the oxidized layers were 6.5, 11, 48, and 98 nm, respectively, for the as-grown, 250°C annealing sample for 4 h under 1-10-6 Torr, and 150° and 250°C annealing samples for 15 h under 20 mTorr.

    Original languageEnglish
    Pages (from-to)2371-2373
    Number of pages3
    JournalJournal of the American Ceramic Society
    Volume91
    Issue number7
    DOIs
    Publication statusPublished - Jul 2008

    Fingerprint

    Dive into the research topics of 'Surface oxidation of Ge33As12Se55 films'. Together they form a unique fingerprint.

    Cite this