Surface passivation by atomic-layer-deposited Al2O 3/TiO2 stacks

Dongchul Suh, Duk Yong Choi, Jun Yu, Wensheng Liang, Klaus J. Weber

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (Scopus)

    Abstract

    A detailed study of the passivation quality of Al2O3 and TiO2 stacks on boron-doped emitters, where the stacks were deposited by thermal atomic layer deposition. The passivation quality was studied for different post-TiO2 anneal temperature, as a function of Al2O3 and TiO2 layer thickness. For annealed Al2O3 layers, as-deposited TiO2 capping layer decreased emitter saturation current density considerably, which was more significant on Al2O3 with thickness below 10 nm. However, post-TiO2 deposition anneal in O2 environment degraded the passivation, which was attributed to the increasing interface trap density in spite of increasing effective fixed charge density.

    Original languageEnglish
    Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1304-1306
    Number of pages3
    ISBN (Print)9781479932993
    DOIs
    Publication statusPublished - 2013
    Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
    Duration: 16 Jun 201321 Jun 2013

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371

    Conference

    Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
    Country/TerritoryUnited States
    CityTampa, FL
    Period16/06/1321/06/13

    Fingerprint

    Dive into the research topics of 'Surface passivation by atomic-layer-deposited Al2O 3/TiO2 stacks'. Together they form a unique fingerprint.

    Cite this