@inproceedings{a3d6ddc5b80c4976b8fa0f5e65cdb426,
title = "Surface passivation by atomic-layer-deposited Al2O 3/TiO2 stacks",
abstract = "A detailed study of the passivation quality of Al2O3 and TiO2 stacks on boron-doped emitters, where the stacks were deposited by thermal atomic layer deposition. The passivation quality was studied for different post-TiO2 anneal temperature, as a function of Al2O3 and TiO2 layer thickness. For annealed Al2O3 layers, as-deposited TiO2 capping layer decreased emitter saturation current density considerably, which was more significant on Al2O3 with thickness below 10 nm. However, post-TiO2 deposition anneal in O2 environment degraded the passivation, which was attributed to the increasing interface trap density in spite of increasing effective fixed charge density.",
keywords = "Dielectric films, Passivation, Photovoltaic cells, Silicon",
author = "Dongchul Suh and Choi, {Duk Yong} and Jun Yu and Wensheng Liang and Weber, {Klaus J.}",
year = "2013",
doi = "10.1109/PVSC.2013.6744381",
language = "English",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1304--1306",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
}