Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al 2O 3

Lachlan E. Black; Keith R. McIntosh

doi:10.1063/1.4718596

Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al ₂O ₃

Lachlan E. Black^*, Keith R. McIntosh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Atmospheric pressure chemical vapor deposition of Al ₂O ₃ is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10 ¹²cm ^-2) and a relatively low interface defect density (∼1 × 10 ¹¹eV ^-1cm ^-2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.

Original language	English
Article number	202107
Journal	Applied Physics Letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4718596
Publication status	Published - 14 May 2012

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abstract = "Atmospheric pressure chemical vapor deposition of Al 2O 3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10 12cm -2) and a relatively low interface defect density (∼1 × 10 11eV -1cm -2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.",

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N2 - Atmospheric pressure chemical vapor deposition of Al 2O 3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10 12cm -2) and a relatively low interface defect density (∼1 × 10 11eV -1cm -2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.

AB - Atmospheric pressure chemical vapor deposition of Al 2O 3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10 12cm -2) and a relatively low interface defect density (∼1 × 10 11eV -1cm -2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.

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JF - Applied Physics Letters

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Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al ₂O ₃

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