Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC_x:H films

Engineering

• Passivation 100%
• Crystalline Silicon 66%
• Methane 66%
• Deposited Film 66%
• Silicon Wafer 33%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Physical Model 33%
• Semiconductor Structure 33%
• Effective Lifetime 33%
• Excess Carrier Density 33%
• Surface Recombination Velocity 33%
• Lifetime Measurement 33%
• Shockley 33%
• Quasi Steady State 33%
• Band Bending 33%
• Deposition Condition 33%
• Deposition Temperature 33%

Material Science

• Crystalline Material 100%
• Film 100%
• Amorphous Material 100%
• Surface Passivation 100%
• Amorphous Silicon 50%
• Silicon 25%
• Silicon Wafer 25%
• Carrier Concentration 25%
• Semiconductor Structure 25%
• Silicon Carbide 25%
• Plasma-Enhanced Chemical Vapor Deposition 25%
• Silane 25%