Surface roughness in plasma-etched As2S3 films: Its origin and improvement

Duk Yong Choi; Steve Madden; Andrei Rode; Rongping Wang; Adrian Ankiewicz; Barry Luther-Davies

doi:10.1109/TNANO.2008.920165

Surface roughness in plasma-etched As₂S₃ films: Its origin and improvement

Duk Yong Choi^*, Steve Madden, Andrei Rode, Rongping Wang, Adrian Ankiewicz, Barry Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We describe the microstructure of As₂S₃ films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As₂S₃ surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF₄-O₂ to CHF₃-O₂ and the application of a thin-conformal coating onto structures already patterned using CF₄-O₂ plasma.

Original language	English
Article number	4467080
Pages (from-to)	285-290
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	7
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2008.920165
Publication status	Published - May 2008

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10.1109/TNANO.2008.920165

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@article{5a2e80b8adcc417a9341bdd1badc4d36,

title = "Surface roughness in plasma-etched As2S3 films: Its origin and improvement",

abstract = "We describe the microstructure of As2S3 films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As2S3 surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF4-O2 to CHF3-O2 and the application of a thin-conformal coating onto structures already patterned using CF4-O2 plasma.",

keywords = "Arsenic trisulphide (AsS), Nanoscale phase separation, Optical scattering loss, Plasma etching, Surface roughness",

author = "Choi, {Duk Yong} and Steve Madden and Andrei Rode and Rongping Wang and Adrian Ankiewicz and Barry Luther-Davies",

year = "2008",

month = may,

doi = "10.1109/TNANO.2008.920165",

language = "English",

volume = "7",

pages = "285--290",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Surface roughness in plasma-etched As2S3 films

T2 - Its origin and improvement

AU - Choi, Duk Yong

AU - Madden, Steve

AU - Rode, Andrei

AU - Wang, Rongping

AU - Ankiewicz, Adrian

AU - Luther-Davies, Barry

PY - 2008/5

Y1 - 2008/5

N2 - We describe the microstructure of As2S3 films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As2S3 surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF4-O2 to CHF3-O2 and the application of a thin-conformal coating onto structures already patterned using CF4-O2 plasma.

AB - We describe the microstructure of As2S3 films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As2S3 surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF4-O2 to CHF3-O2 and the application of a thin-conformal coating onto structures already patterned using CF4-O2 plasma.

KW - Arsenic trisulphide (AsS)

KW - Nanoscale phase separation

KW - Optical scattering loss

KW - Plasma etching

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=44049095178&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2008.920165

DO - 10.1109/TNANO.2008.920165

M3 - Article

SN - 1536-125X

VL - 7

SP - 285

EP - 290

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

M1 - 4467080

ER -

Surface roughness in plasma-etched As₂S₃ films: Its origin and improvement

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