TY - JOUR
T1 - Surface-States-Modulated High-Performance InAs Nanowire Phototransistor
AU - Zhang, Xutao
AU - Yao, Xiaomei
AU - Li, Ziyuan
AU - Zhou, Chen
AU - Yuan, Xiaoming
AU - Tang, Zhou
AU - Hu, Weida
AU - Gan, Xuetao
AU - Zou, Jin
AU - Chen, Pingping
AU - Lu, Wei
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/8/6
Y1 - 2020/8/6
N2 - We report a high-performance InAs nanowire phototransistor with the photoresponse mechanism governed by the gate-controlled surface states. Detailed characterizations suggest that the high density of surface defect states of the InAs nanowire can capture electrons from the nanowire core to form negative surface charge centers. Before and after light illumination, nanowire surface states undergo processes of capturing and neutralizing the electrons, respectively. This leads to an increase in the concentration and mobility of electrons after light illumination, which endows the device with remarkable photoresponsivity. After modulating the surface states through gate voltage and surface passivation, significantly high responsivity of up to 4.4 × 103 A/W and gain of up to 2.7 × 103 under the illumination of light at the wavelength of 2000 nm are obtained, putting our devices among the high-performance short-wave infrared nanowire photodetectors. This work provides an important reference for understanding the surface effects of nanomaterials and enhancing the performance of nanophotodetectors by modulating the surface states.
AB - We report a high-performance InAs nanowire phototransistor with the photoresponse mechanism governed by the gate-controlled surface states. Detailed characterizations suggest that the high density of surface defect states of the InAs nanowire can capture electrons from the nanowire core to form negative surface charge centers. Before and after light illumination, nanowire surface states undergo processes of capturing and neutralizing the electrons, respectively. This leads to an increase in the concentration and mobility of electrons after light illumination, which endows the device with remarkable photoresponsivity. After modulating the surface states through gate voltage and surface passivation, significantly high responsivity of up to 4.4 × 103 A/W and gain of up to 2.7 × 103 under the illumination of light at the wavelength of 2000 nm are obtained, putting our devices among the high-performance short-wave infrared nanowire photodetectors. This work provides an important reference for understanding the surface effects of nanomaterials and enhancing the performance of nanophotodetectors by modulating the surface states.
UR - http://www.scopus.com/inward/record.url?scp=85089616514&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.0c01879
DO - 10.1021/acs.jpclett.0c01879
M3 - Article
SN - 1948-7185
VL - 11
SP - 6413
EP - 6419
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 15
ER -