Survey of dopant-free carrier-selective contacts for silicon solar cells

James Bullock; Yimao Wan; Mark Hettick; Jonas Geissbuhler; Alison J. Ong; Daisuke Kiriya; Di Yan; Thomas Allen; Jun Peng; Xinyu Zhang; Carolin M. Sutter-Fella; Stefaan De Wolf; Christophe Ballif; Andres Cuevas; Ali Javey

doi:10.1109/PVSC.2016.7749580

Survey of dopant-free carrier-selective contacts for silicon solar cells

James Bullock, Yimao Wan, Mark Hettick, Jonas Geissbuhler, Alison J. Ong, Daisuke Kiriya, Di Yan, Thomas Allen, Jun Peng, Xinyu Zhang, Carolin M. Sutter-Fella, Stefaan De Wolf, Christophe Ballif, Andres Cuevas, Ali Javey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Citations (Scopus)

Abstract

In recent years a significant amount of effort has been devoted towards the development of dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys a range of materials which have the potential to induce carrier-selectivity when applied to c-Si, including metals, metal oxides, alkali / alkaline earth metal salts, and organic conductors. Simple Ohmic test structures are used to assess the selectivity of these materials, that is, hole contacts are tested on p-type c-Si and electron contacts on n-type c-Si. Among these alternatives, a number of systems with exceptional potential are identified.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	210-214
Number of pages	5
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749580
Publication status	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

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10.1109/PVSC.2016.7749580

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Bullock, J., Wan, Y., Hettick, M., Geissbuhler, J., Ong, A. J., Kiriya, D., Yan, D., Allen, T., Peng, J., Zhang, X., Sutter-Fella, C. M., De Wolf, S., Ballif, C., Cuevas, A., & Javey, A. (2016). Survey of dopant-free carrier-selective contacts for silicon solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 210-214). Article 7749580 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749580

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abstract = "In recent years a significant amount of effort has been devoted towards the development of dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys a range of materials which have the potential to induce carrier-selectivity when applied to c-Si, including metals, metal oxides, alkali / alkaline earth metal salts, and organic conductors. Simple Ohmic test structures are used to assess the selectivity of these materials, that is, hole contacts are tested on p-type c-Si and electron contacts on n-type c-Si. Among these alternatives, a number of systems with exceptional potential are identified.",

author = "James Bullock and Yimao Wan and Mark Hettick and Jonas Geissbuhler and Ong, {Alison J.} and Daisuke Kiriya and Di Yan and Thomas Allen and Jun Peng and Xinyu Zhang and Sutter-Fella, {Carolin M.} and {De Wolf}, Stefaan and Christophe Ballif and Andres Cuevas and Ali Javey",

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doi = "10.1109/PVSC.2016.7749580",

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Bullock, J, Wan, Y, Hettick, M, Geissbuhler, J, Ong, AJ, Kiriya, D, Yan, D, Allen, T, Peng, J, Zhang, X, Sutter-Fella, CM, De Wolf, S, Ballif, C, Cuevas, A & Javey, A 2016, Survey of dopant-free carrier-selective contacts for silicon solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749580, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 210-214, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749580

Survey of dopant-free carrier-selective contacts for silicon solar cells. / Bullock, James; Wan, Yimao; Hettick, Mark et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 210-214 7749580 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kiriya, Daisuke

AU - Yan, Di

AU - Allen, Thomas

AU - Peng, Jun

AU - Zhang, Xinyu

AU - Sutter-Fella, Carolin M.

AU - De Wolf, Stefaan

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AU - Cuevas, Andres

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AB - In recent years a significant amount of effort has been devoted towards the development of dopant-free carrier selective contacts for crystalline silicon (c-Si) solar cells. This short manuscript surveys a range of materials which have the potential to induce carrier-selectivity when applied to c-Si, including metals, metal oxides, alkali / alkaline earth metal salts, and organic conductors. Simple Ohmic test structures are used to assess the selectivity of these materials, that is, hole contacts are tested on p-type c-Si and electron contacts on n-type c-Si. Among these alternatives, a number of systems with exceptional potential are identified.

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Bullock J, Wan Y, Hettick M, Geissbuhler J, Ong AJ, Kiriya D et al. Survey of dopant-free carrier-selective contacts for silicon solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 210-214. 7749580. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749580

Survey of dopant-free carrier-selective contacts for silicon solar cells

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