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Abstract
Ion track formation, amorphization, and the formation of porosity in crystalline GaSb induced by 185 MeV Au197 swift heavy ion irradiation is investigated as a function of fluence and irradiation angle relative to the surface normal. Rutherford backscattering spectrometry in channeling configuration and small-angle x-ray scattering reveal an ion track radius between 3 and 5 nm. The observed pore morphology and saturation swelling of GaSb films shows a strong irradiation angle dependence. Raman spectroscopy and scanning electron microscopy show that the ion tracks act as a source of strain in the material, leading to macroscopic plastic flow at high fluences and off-normal irradiation. The results are consistent with the ion hammering model for glasses. Furthermore, wide-angle x-ray scattering reveals the formation of nanocrystallites inside otherwise amorphous GaSb after the onset of porosity.
| Original language | English |
|---|---|
| Article number | 046001 |
| Journal | Physical Review Materials |
| Volume | 4 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2020 |
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Dive into the research topics of 'Swift heavy ion irradiation of GaSb: From ion tracks to nanoporous networks'. Together they form a unique fingerprint.Projects
- 1 Finished
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Swift heavy ion induced nano-porous Sb-based semiconductors
Kluth, P. (PI), Nordlund, K. (CoI) & Schmechel, R. (CoI)
18/03/19 → 17/03/24
Project: Research
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