TY - JOUR
T1 - Swift-heavy ion track electronics (SITE)
AU - Fink, D.
AU - Chadderton, L. T.
AU - Hoppe, K.
AU - Fahrner, W. R.
AU - Chandra, A.
AU - Kiv, A.
PY - 2007/8
Y1 - 2007/8
N2 - An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms "TEAMS" (tunable electrically anisotropic material on semiconductor) and "TEMPOS" (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators.
AB - An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms "TEAMS" (tunable electrically anisotropic material on semiconductor) and "TEMPOS" (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators.
KW - Electronics
KW - Ion tracks
KW - Negative differential resistances
KW - TEMPOS structures
UR - http://www.scopus.com/inward/record.url?scp=34447331706&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2007.03.018
DO - 10.1016/j.nimb.2007.03.018
M3 - Article
SN - 0168-583X
VL - 261
SP - 727
EP - 730
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-2 SPEC. ISS.
ER -