Swift-heavy ion track electronics (SITE)

D. Fink*, L. T. Chadderton, K. Hoppe, W. R. Fahrner, A. Chandra, A. Kiv

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    An overview about the state-of-art of the development of a new type of nanoelectronics based on swift-heavy ions is given. Polymeric as well as silicon-based substrates have been used, and both latent and etched ion tracks play a role. Nowadays the interest has shifted from simple scaling-down of capacitors, magnets, transformers, diodes, transistors, etc. towards new types of ion track-based structures hitherto unknown in electronics. These novel structures, denoted by the acronyms "TEAMS" (tunable electrically anisotropic material on semiconductor) and "TEMPOS" (tunable electronic material with pores in oxide on semiconductor), may exhibit properties of tunable resistors, capacitors, diodes, sensors and transistors. Their general current/voltage characteristics are outlined. As these structures are often influenced by ambient physical or chemical parameters they also act as sensors. A peculiarity of these structures is the occurrence of negative differential resistances (NDRs) which makes them feasible for applications in tunable flip-flops, amplifiers and oscillators.

    Original languageEnglish
    Pages (from-to)727-730
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume261
    Issue number1-2 SPEC. ISS.
    DOIs
    Publication statusPublished - Aug 2007

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